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IEICE Transactions on Electronics 2005 E88-C(1):119-124; doi:10.1093/ietele/E88-C.1.119
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Copyright © 2005 The Institute of Electronics, Information and Communication Engineers

Nonlinear Analysis of a Double Avalanche Region IMPATT Diode

Alexander M. ZEMLIAK1, Carlos CELAYA-BORGES2 and Roque De La CRUZ1

1 The authors are with Universidad Autonoma de Puebla, Av. San Claudio s/n, Ciudad Universitaria, 72570, Puebla, Mexico. E-mail: azemliak{at}fcfm.buap.mx, 2 The author is with Instituto Tecnologico de Puebla, Av. Tecnologico 402, Col. Maravillas, 72220, Puebla, Mexico.

The comparative analysis of the well known Double Drift Region (DDR) IMPATT diode structure and the n+pvnp+ structure for the avalanche diode has been realized on the basis of the drift-diffusion nonlinear model. The last type of the diode was named as Double Avalanche Region (DAR) IMPATT diode. This structure includes two avalanche regions inside the diode. The phase delay which was produced by means of the two avalanche zones and the drift zone v is sufficient for the negative resistance obtained for the wide frequency region. The numerical model that is used for the analysis of the various diode structures includes all principal features of the physical phenomena inside the semiconductor structure. The admittance characteristics of both types of the diodes were analyzed in very wide frequency region.

Key Words: semiconductor microwave devices, modelling and simulation, numerical methods

Manuscript received May 6, 2004. Manuscript revised August 16, 2004.


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