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IEICE Transactions on Electronics 2005 E88-C(6):1218-1224; doi:10.1093/ietele/e88-c.6.1218
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Copyright © 2005 The Institute of Electronics, Information and Communication Engineers

Special Section on Analog Circuit and Device Technologies -- Papers -- RF

A CMOS Dual-Mode RF Front-End Receiver for GSM and WCDMA Applications

Chun-Lin KO1, Ming-Ching KUO2 and Chien-Nan KUO1

1 The authors are with National Chiao-Tung University, Hsinchu 300, Taiwan. E-mail: chunlinko{at}giga.net.tw, E-mail: cnkuo{at}mail.nctu.edu.tw, 2 The author is with Industrial Technology Research Institute, Hsinchu 310, Taiwan. E-mail: mckuo{at}itri.org.tw

A dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented in this paper. This chip uses low-IF and zero-IF receiver architectures for GSM and WCDMA respectively to fulfill the entirely different system requirements of the two standards. It consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end is implemented in a standard 0.25 µm CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3 dB, 36 dB for the GSM900, 5.9 dB, 31 dB for the DCS1800, and 4.3 dB, 29.6 dB for the WCDMA, respectively.

Key Words: CMOS RF receiver, dual-mode, GSM, W-CDMA

Manuscript received November 1, 2004. Manuscript revised January 27, 2005.


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