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IEICE Transactions on Electronics 2006 E89-C(12):1786-1791; doi:10.1093/ietele/e89-c.12.1786
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Copyright © 2006 The Institute of Electronics, Information and Communication Engineers

Special Section on Towards the Realization of Organic Molecular Electronics -- Papers -- Bioelectronics and Sensors

A Novel Formaldehyde-Degrading Fungus, Trichoderma virens: Isolation and Some Properties

Ayako SAWADA1, Ryuzoh IKEDA2, Eiichi TAMIYA2, Taketoshi YOSHIDA3, Takashi OYABU1 and Hidehito NANTO4

1 The authors are with the Graduate School of Regional Economic Systems, Kanazawa Seiryo University, Kanazawa-shi, 920-8620 Japan. E-mail: sawa{at}po.incl.ne.jp, 2 The authors are with the School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi-shi, 923-1292 Japan., 3 The author is with School of Knowledge Science, Japan Advanced Institute of Science and Technology, Nomi-shi, 923-1292 Japan., 4 The author is with Kanazawa Institute of Technology, Hakusan-shi, 924-0838 Japan.


   Abstract

We succeeded in isolating two formaldehyde-degrading fungi, the strains BDF001 and 002, from the rhizospheric soil of formaldehyde-exposed potted golden pothos (Epipremnum aureum), and from the formaldehyde-exposed cultivation soil without plants, respectively. Sequence analysis of the ITS-5.8S rDNA regions confirmed that both fungi were of the same species, Trichoderma virens. These two strains, however, obviously differed from each other in formaldehyde resistance and formaldehyde-degrading ability. The formaldehyde concentration allowing a growth during cultivation for 10 days for the strain BDF001 was up to 0.6%, and that for the strain BDF002 was up to 0.35%. The strain BDF001 showed a formaldehyde-degrading activity 2.3 times higher than that of the strain BDF002. Ranges of the possible growth pH and temperature in the presence of 0.21% formaldehyde were between 4 and 9, and around 25°C, respectively.

Key Words: formaldehyde degradation, Trichoderma virens, fungus


Manuscript received May 18, 2006. Manuscript revised July 19, 2006.


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