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IEICE Transactions on Electronics 2008 E91-C(6):862-870; doi:10.1093/ietele/e91-c.6.862
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Copyright © 2008 The Institute of Electronics, Information and Communication Engineers

Special Section on Analog Circuits and Related SoC Integration Technologies - Papers

A High-Q Active Inductor Circuit for Quasi-Millimeter-Wave Frequency Range

Toru MASUDA1, Yukio HATTORI1, Hiroki SHIKAMA2 and Akira HYOGO2

1 The authors are with the Graduate School of Science and Technology, Tokyo University of Science, Noda-shi, 278-8510 Japan., 2 The authors are with the Faculty of Sciences and Technology, Tokyo University of Science, Noda-shi, 278-8510 Japan.


  Abstract

This paper describes a novel high-Q active inductor circuit configuration composed of an operational transconductance amplifier (OTA) and an input RC network. Due to the phase rotation made by the input RC network, the active inductor circuit provides high-Q inductive impedance at higher frequencies. According to circuit simulation with design-kit of a 90-GHz-fT SiGe HBT technology, an inductance of more than 0.53 nH and Q of more than 80 can be obtained at quasi-millimeter-wave frequency, 24 GHz. The Q value is tunable by controlling the transconductance of the OTA. These features are also ensured by means of measurements of fabricated active inductor circuit. Since the active inductor circuit needs small chip area, which is 25% of a conventional passive inductor, the proposed active inductor contributes to implement a cost-effective high-Q notch filter for frequencies up to quasi-millimeter-wave frequencies.

Key Words: active inductor, operational transconductor amplifier, SiGe HBT

Manuscript received October 29, 2007. Manuscript revised December 27, 2007.


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