Copyright © 2008 The Institute of Electronics, Information and Communication Engineers
Special Section on Analog Circuits and Related SoC Integration Technologies - Papers |
Charge Pump Design for TFT-LCD Driver IC Using Stack-MIM Capacitor
1 The authors are with SoC Design Lab., Department of Electronic Engineering, Changwon National University, Korea. E-mail: youngkim{at}changwon.ac.kr
A cross-coupled charge pump with internal pumping capacitor, which is advantageous from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using NMOS and PMOS diodes connected to boosting nodes from VIN nodes, the pumping node is precharged to the same value at the pumping node in starting pumping. Since the first-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located in front of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with the conventional cross-coupled charge pump by using a stack-MIM capacitor. A proposed charge pump for TFT-LCD driver IC is designed with 0.13 µm triple-well DDI process, fabricated, and tested.
Key Words: charge pump, pumping capacitor, stack-MIM, clock driver, TFT-LCD
Manuscript received October 23, 2007. Manuscript revised December 10, 2007.
References
[1] G.-H. Lim, S.Y. Song, J.H. Park, L.Z. Li, C.H. Lee, T.Y. Lee, G.S. Cho, M.H. Park, P.B. Ha, and Y.H. Kim, "A charge pump design with internal pumping capacitor for TFT-LCD driver IC," KIMICS, vol.11, no.10, pp.1899–1909, Oct. 2007. [2] E. Bayer and H. Schmeller, "A high efficiency single-cell cascaded charge pump topology," Proc. IEEE Power Electronics Specialists Conference, vol.1, pp.290–295, Aug. 2001. [3] P. Favrat, P. Deval, and M.J. Declercq, "A high-efficiency CMOS voltage doubler," IEEE J. Solid-State Circuits, vol.33, pp.410–416, March 1998. [4] S.I. Cho, J.S. Heo, K.S. Min, and Y.H. Kim, "A boosted voltage generator for low-voltage DRAMs," Current Applied Physics, vol.3, pp.501–505, Dec. 2003.
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