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IEICE Transactions on Electronics 2007 E90-C(9):1721-1728; doi:10.1093/ietele/e90-c.9.1721
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Copyright © 2007 The Institute of Electronics, Information and Communication Engineers

Special Section on Microwave and Millimeter-Wave Technology -- Papers -- Active Devices/Circuits

A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS

Minoru NAGATA1, Hideaki MASUOKA1, Shin-ichi FUKASE1, Makoto KIKUTA2, Makoto MORITA2 and Nobuyuki ITOH1

1 The authors are with Semiconductor Company, Toshiba Corp., Yokohama-shi, 247-8585 Japan. E-mail: minoru.nagata{at}toshiba.co.jp, 2 The authors are with Toshiba Microelectronics Corp., Kawasaki-shi, 210-8538 Japan.


  Abstract

A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and {Delta}{Sigma}-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of {Delta}{Sigma}-fractional-N PLL and interference-robust {infty}-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.

Key Words: ETC transceiver, internal matching circuits, ASK modulator, {infty}-shape inductor VCO

Manuscript received February 5, 2007. Manuscript revised April 13, 2007.


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